PART |
Description |
Maker |
H5MS5162DFR-K3M H5MS5162DFR-E3M H5MS5162DFR-J3M H5 |
512Mb (32Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3) 512Mb (64Mx8) DDR200 (2-2-2) 512Mb (32Mx16) DDR200 (2-2-2) 512Mb (128Mx4) DDR200 (2-2-2) 512Mb (64Mx8) DDR333 (2.5-3-3) ?的512Mb4Mx8DDR333内存.5-3-3)?
|
Electronic Theatre Controls, Inc.
|
DOM40S3R288 DOM40S3R080 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 40Pin盘模块Min.16MBMax.512MB,真IDE接口
|
Hanbit Electronics Co., Ltd.
|
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误 512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
KVR266X64SC25 KVR266X64SC25_512 KVR266X64SC25/512 |
512MB 266MHz DDR Non-ECC CL2.5 SODIMM MEMORY MODULE SPECIFICATION 512MB 64M x 64-BIT DDR266 CL2.5 200-PIN SODIMM
|
ETC List of Unclassifed Manufacturers
|
AT91SAM9G45PRE |
DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR
|
ATMEL Corporation
|
IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM3216 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 512Mb Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
|
W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
TS512MJFV60 |
512MB USB2.0 JetFlash?/a> 512MB USB2.0 JetFlash垄芒
|
Transcend Information. Inc.
|
HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|